12/25/2023 0 Comments 3inch vstackAltogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. Therefore, no material degradation was observed in spite of the thermal strain. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO 2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. However, no additional epitaxial regrowth steps are implemented after the bonding step. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. ![]() However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform.
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